Let us understand difference between Avalanche Photodiode(APD) and P-I-N diode: • APD is basically a P-I-N diode with very high reverse bias voltage. This flow of majority carriers due to a concentration gradient is called a diffu… Like other diodes, Zener diodes conduct when a forward bias is applied. Have a doubt at 3 am? Difference Between Tcp Ip Model And Osi Model, http://wikidifferences.com/index.php?title=Difference_Between_Zener_And_Avalanche&oldid=351, Difference Between Circuit Switching Network And Packet Switching Network, Difference Between Tcp Ip Model And Osi Model, In the Zener effect or Zener breakdown , the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor in a reverse biased p-n diode . The valence electrons break bonding with the parent atom and become free electrons. 1. Both refer to breakdown of a diode under reverse bias. Electric connection. Diodes are two terminal electric components with infinite conductivity in one direction and infinite resistance in other direction .is a type of electrical breakdown in a reverse biased p-n diode in which the electric field enables tunneling of electrons from the valence to … The significant difference between Zener and Avalanche breakdown is the doping characteristics. This electric field exerts a force on the electrons and frees them from a covalent bond. The breakdown diode is a two-terminal electrical component which is anode as well as the cathode. The voltage drop at the diode remains stable over an extensive voltages range. Difference Between Zener Breakdown and Avalanche Breakdown, Fundamentals of Business Mathematics & Statistics, Fundamentals of Economics and Management – CMA, Difference Between Solar Eclipse And Lunar Eclipse, Difference Between Land Breeze And Sea Breeze, Difference Between Longitudinal and Transverse Wave, Difference Between Diffraction and Interference, Difference Between Resistance and Resistivity, Difference Between Concave And Convex Mirror. Answer: The diode whose junction is moderately doped and is designed to operate in the reverse biasing condition. In Zener breakdown, the electric field becomes substantially strong, but remains narrow, thus restricting many charge carriers to accelerate. The avalanche diode is constructed in a way similar to that of the Zener diode, and both Avalanche breakdown, as well as Zener breakdown, are present in an avalanche diode. Difference Between Dna And Rna Both sides of PN junction are heavily doped in zener breakdown. This results in the generation of more free electrons. Diodes are two terminal electric components with infinite conductivity in one direction and infinite resistance in other direction .is a type of electrical breakdown in a reverse biased p-n diode in which the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor . Electric field produced is weak in nature . Zener breakdown. The Difference. 3. We have already learned that Zener breakdown occurs at the voltage lower than the Avalanche breakdown voltage. When reverse-biased voltage is increased in the diode, the narrow depletion region starts generating a strong electric field. These free electrons carrying electric current from one place to another. The temperature coefficient of Zener and Avalanche breakdown is different. The difference between Zener breakdown and Avalanche breakdown will help us in understanding the occurrence of their mechanism. 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